1 elm13416ca-s general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient t10s rja 70 90 c /w 1 maximum junction-to-ambient steady-state 100 125 c /w 1, 4 maximum junction-to-lead steady-state rjl 63 80 c /w parameter symbol limit unit note drain-source voltage vds 20 v gate-source voltage vgs 8 v continuous drain current ta=25c id 6.5 a ta=70c 5.2 pulsed drain current idm 30 a 3 power dissipation ta=25c pd 1.4 w 2 ta=70c 0.9 junction and storage temperature range tj, tstg -55 to 150 c elm13416ca-s uses advanced trench technology to provide excellent rds(on), low gate charge and operation with gate voltages as low as 1.8v and internal esd protection is included. ? vds=20v ? id=6.5a (vgs=4.5v) ? rds(on) < 22m (vgs=4.5v) ? rds(on) < 26m (vgs=2.5v) ? rds(on) < 34m (vgs=1.8v) ? esd protected pin configuration circuit sot-23(top view) pin no. pin name 1 gate 2 source 3 drain 1 2 3 5 - single n-channel mosfet g d s
2 elm13416ca-s electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 20 v zero gate voltage drain current idss vds=20v, vgs= 0v 1 a tj=55c 5 gate-body leakage current igss vds=0v, vgs=8v 10 a gate threshold voltage vgs(th) vds=vgs, id=250 a 0.4 0.7 1.1 v on state drain current id(on) vgs=4.5v, vds=5v 30 a static drain-source on-resistance rds(on) vgs=4.5v, id= 6.5a 16 22 m tj = 125c 22 30 vgs = 2.5v, id =5.5 a 18 26 vgs = 1.8v, id =5 a 21 34 forward transconductance gfs vds = 5v, id =6.5 a 50 s diode forward voltage vsd is = 1a, vgs=0v 0.62 1.00 v max. body -diode continuous current is 2 a dynamic parameters input capacitance ciss vgs=0v, vds=10v, f=1mhz 1295 1650 pf output capacitance coss 160 pf reverse transfer capacitance crss 87 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 1.8 k switching parameters total gate charge qg vgs=4.5v, vds=10v, id=6.5a 10.0 nc gate-source charge qgs 4.2 nc gate-drain charge qgd 2.6 nc turn - on delay time td(on) vgs=4.5v, vds=10v rl=1.54, rgen=3 280.00 ns turn - on rise time tr 328.00 ns turn - off delay time td(off) 3.76 ns turn - off fall time tf 2.24 ns body diode reverse recovery time trr if =6.5 a, dl/dt = 100a/s 31 41 ns body diode reverse recovery charge qrr if =6.5 a, dl/dt = 100a/s 6.8 nc 5 - single n-channel mosfet ta=25 c note : 1. the value of rja is measured with the device mounted on 1in2 fr-4 board of 2oz. copper, in still air environment with ta =25c. the value in any given application depends on the user's speci?c board design. 2. the power dissipation pd is based on tj(max)=150c, using 10s junction-to-ambient thermal resistance. 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial tj=25c. 4. the rja is the sum of the thermal impedence from junction to lead rjl and lead to ambient. 5. the static characteristics in figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 6. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 fr-4 board with 2oz.copper, assuming a maximum junction temperature of tj(max)=150c. the soa curve provides a single pulse rating.
3 typical electrical and thermal characteristics ao3416 typical electrical and thermal characteristics 17 5 2 10 0 18 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 2 4 6 8 10 r ds(on) (m ? ? ? ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6.5a v gs =1.8v i d =5a v gs =2.5v i d =5.5a 25 ? c 125 ? c v ds =5v v gs =1.8v v gs =4.5v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 3.1v 4.5v 1.8v v gs =2.5v 40 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 2 4 6 8 10 r ds(on) (m ? ? ? ? ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 ? c 125 ? c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =6.5a v gs =1.8v i d =5a v gs =2.5v i d =5.5a 10 20 30 40 50 60 0 2 4 6 8 r ds(on) (m ? ? ? ? ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 ? c 125 ? c v ds =5v v gs =1.8v v gs =4.5v i d =6.5a 25 ? c 125 ? c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2.5v 3.1v 4.5v 1.8v v gs =2.5v rev 5: july 2010 www.aosmd.com page 3 of 5 elm13416ca-s 5 - single n-channel mosfet
4 ao3416 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 100ms t j(max) =150 ? c t a =25 ? c 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 100ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =125 ? c/w t j(max) =150 ? c t a =25 ? c rev 5: july 2010 www.aosmd.com page 4 of 5 elm13416ca-s 5 - single n-channel mosfet ao3416 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 100ms t j(max) =150 ? c t a =25 ? c 0 1 2 3 4 5 0 2 4 6 8 10 12 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =6.5a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 ? c t a =25 ? c 100 s 10ms 100ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =125 ? c/w t j(max) =150 ? c t a =25 ? c rev 5: july 2010 www.aosmd.com page 4 of 5
5 elm13416ca-s 5 - single n-channel mosfet ao3416 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d io de r ecovery t est c ircu it & w avefo rm s v ds + rr q = - idt t - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d io de r ecovery t est c ircu it & w avefo rm s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff rev 5: july 2010 www.aosmd.com page 5 of 5 test circuit & waveform
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